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OBSOLETE - PLEASE USE ZXMN2AMCTA
ZXMN2AM832
MPPS? Miniature Package Power Solutions
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V (BR)DSS = 20V; R DS(ON) = 0.12 ; I D = 3A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 20V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other key benefits :
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count
FEATURES
? Low On - Resistance
? Fast switching speed
? Low threshold
? Low gate drive
? 3mm x 2mm MLP
APPLICATIONS
? DC-DC Converters
? Power Management Functions
? Disconnection switches
? Motor Control
ORDERING INFORMATION
3x2mm Dual Die MLP
PINOUT
7
DEVICE
ZXMN2AM832TA
REEL
7 ’‘
TAPE
WIDTH
8mm
QUANTITY
PER REEL
3000 units
ZXMN2AM832TC
13’‘
8mm
10000 units
3mm x 2mm Dual MLP
underside view
DEVICE MARKING
DNA
ISSUE 3 - JANUARY 2005
1
SEMICONDUCTORS
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相关代理商/技术参数
ZXMN2AM832TC 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN2AMCTA 功能描述:MOSFET 20V DUAL N-CH ENH 12V VGS 3.7 IDS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN2B01F 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23 制造商:DIODES 功能描述:MOSFET, N, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:2. 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 20V, 2.4A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:2.4A, Drain Source Voltage Vds:20V, On Resistance Rds(on):100mohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1V, No. of Pins:3 , RoHS Compliant: Yes 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:2.
ZXMN2B01FTA 功能描述:MOSFET 20V N-Channel MOSFET w/low gate drive cap RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN2B03E6 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6
ZXMN2B03E6TA 功能描述:MOSFET 20V N-Ch 4.6 MOSFET w/low gate drive cap RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXMN2B03E6TA-CUT TAPE 制造商:DIODES 功能描述:ZXMN2B03E6 Series N-Channel 20 V 0.04 Ohm Power MOSFET Surface Mount - SOT-23-6
ZXMN2B14FH 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 20V, 4.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; No. of Pins:3 ;RoHS Compliant: Yes